Semiconductor Devices and Associated Hardware: GC41549B-155, GC41549D-155, GC4215-150B
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| GC41549B-155 GC41549B155 | 5961-01-353-7003 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549C-155 GC41549C155 | 5961-01-355-7210 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549D-155 GC41549D155 | 5961-01-356-4027 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549E-155 GC41549E155 | 5961-01-359-2011 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549F-155 GC41549F155 | 5961-01-359-2012 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549G-155 GC41549G155 | 5961-01-359-2013 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549H-155 GC41549H155 | 5961-01-359-2014 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549I-155 GC41549I155 | 5961-01-359-2015 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41549J-155 GC41549J155 | 5961-01-359-2016 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC41693-M3 GC41693M3 | 5961-01-439-3315 | Semiconductor Device, Diode | III End Item Identification: 5820012679477 E/I fscm 80063 | Lockheed Martin Corporation (26629) Microsemi Corp.-Massachusetts (50101) | |
| GC41835-161 GC41835161 | 5961-01-387-3151 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.190 inches maximum | Lockheed Martin Corporation (26629) | |
| GC41847-15S GC4184715S | 5961-01-225-0552 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.165 inches maximum | UN, Vincent (01851) | |
| GC41848-15S GC4184815S | 5961-01-305-4265 | Semiconductor Device, Diode | Microsemi Corp.-Massachusetts (50101) | ||
| GC42054-92 GC4205492 | 5961-01-497-9979 | Semiconductor Device, Diode | Semiconductor Material: Silicon Inclosure Material: Ceramic | L-3 Communications Corporation (60583) Microsemi Corp.-Massachusetts (50101) | |
| GC4210-15 GC421015 | 5961-01-088-0699 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 pin Overall Length: 0.165 inches maximum | Microsemi Corp.-Massachusetts (50101) | |
| GC4211-15 GC421115 | 5961-01-166-0871 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.145 inches minimum and 0.165 inches maximum | Lockheed Martin Corporation (26629) Microsemi Corp.-Massachusetts (50101) | |
| GC4212-15 GC421215 | 5961-01-011-5689 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.145 inches minimum and 0.165 inches maximum | Microsemi Corp.-Massachusetts (50101) | |
| GC4215-15 GC421515 | 5961-01-299-4404 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 turret Overall Length: 0.097 inches maximum | Lockheed Martin Corporation (26629) Microsemi Corp.-Massachusetts (50101) | |
| GC4215-150-2 GC42151502 | 5961-01-564-6419 | Semiconductor Device, Diode | Semiconductor Material: Silicon Voltage Rating in Volts per Characteristic: 100.0 minimum breakdown voltage, dc Maximum Operating Temp per Measurement point: 150.0 deg celsius ambient air | Microsemi Corp.-Massachusetts (50101) | |
| GC4215-150B GC4215150B | 5961-01-564-6419 | Semiconductor Device, Diode | Semiconductor Material: Silicon Voltage Rating in Volts per Characteristic: 100.0 minimum breakdown voltage, dc Maximum Operating Temp per Measurement point: 150.0 deg celsius ambient air | Microsemi Corp.-Massachusetts (50101) |