Semiconductor Devices and Associated Hardware: DF06S, DIO0004, DSS20-0015B
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| DF06S | 5961-01-607-4641 | Semiconductor Device, Diode | Diodes Inc. (12060) | ||
| DF60AA120 | 5961-01-612-6912 | Semiconductor Device, Diode | Voltage Rating IN Volts PER Characteristic: 1200.0 nominal repetitive peak reverse voltage and 1300.0 nominal nonrepetitive peak reverse voltage Current Rating PER Characteristic: 12.0 milliamperes nominal repetitive peak reverse current Maximum Operating Temp PER Measurement Point: 150.0 deg celsius junction | Sanrex Corp. (080N4) | |
| DG-003776 DG003776 | 5961-01-598-7240 | Semiconductor Device, Diode | Criticality Code Justification: ZZZY Reference Number Differentiating Characteristics: Material will be in accordance with navicp activity hx quality control, manufacturing and testing specifications | DRS Power & Control Technologies (06RP6) | |
| DIO0004 | 5961-00-484-8041 | Semiconductor Device, Diode | Inclosure Material: Glass Overall Length: 0.375 inches maximum Terminal Length: 1.250 inches minimum | Hendry Electronics LTD (U5317) | |
| DKV6520-12 DKV652012 | 5961-01-589-8379 | Semiconductor Device, Diode | Part Name Assigned BY Controlling Agency: Semiconductor device, diode | Advanced Semiconductor Inc. (4U751) | |
| DL4148 | 5961-01-592-3465 | Semiconductor Device, Diode | END Item Identification: 5840-01-541-8783 Part Name Assigned BY Controlling Agency: 500MW high speed switching diode 100 volt | Micro Commercial Components Corp. (374W0) | |
| DL4148-TP DL4148TP | 5961-01-592-6887 | Semiconductor Device, Diode | Special Features: Low current leakage, low cost; compression band construction; surface mount applications; lead free finish/rohs compliant; operating temperature: -65 to +175 deg celcius; maximum thremal resistance: 500K/W junction to ambient END Item Identification: 5840-01-578-4122 Part Name Assigned BY Controlling Agency: 500 mw high speed switching diode 100 volt | Micro Commercial Components Corp. (374W0) | |
| DL4730A | 5961-01-607-0774 | Semiconductor Device, Diode | Overall Length: 0.205 inches nominal Mounting Method: Terminal Inclosure Material: Glass | Rectron Electronic Enterprises Inc. (3FJ41) | |
| DL4734A | 5961-01-608-3584 | Semiconductor Device, Diode | Rectron Electronic Enterprises Inc. (3FJ41) | ||
| DMS 81082B DMS81082B | 5961-00-078-9592 | Semiconductor Device, Photo | Inclosure Material: Glass Overall Length: 0.600 inches maximum Terminal Length: 1.300 inches minimum | DLA Land and Maritime (16236) | |
| DMS 89101B DMS89101B | 5961-01-221-7966 | Semiconductor Device, Photo | DLA Land and Maritime (16236) | ||
| DP2 | 5961-00-880-6029 | Semiconductor Device, Photo | Semiconductor Material: Silicon Terminal Type AND Quantity: 4 pin | International Rectifier Corporation (81483) | |
| DPAD1 TO-78 4L ROHS SEL1054 DPAD1TO784LROHSSEL1054 | 5961-01-575-5317 | Semiconductor Device, Diode | Terminal Type AND Quantity: 4 uninsulated wire lead Current Rating PER Characteristic: 50.00 microamperes nominal forward current, average END Item Identification: Test station electronic/electrical equipment | Linear Integrated Systems Inc. (0MJ08) | |
| DR988 | 5961-00-841-8324 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type AND Quantity: 2 uninsulated wire lead Features Provided: Hermetically sealed case | General Instrument Corp. (72699) | |
| DSA75-16B DSA7516B | 5961-01-602-2387 | Diode Stud Anode | END Item Identification: Circuit break | Ixys Corporation (0A5K5) | |
| DSEI120-06A DSEI12006A | 5961-01-605-1768 | Semiconductor Device, Diode | Inclosure Material: Plastic Features Provided: High frequency Special Features: Advantages are high reliablility circuit operation; low voltage peaks for reduced protection circuits; low losses; operating at lower temperature or space saving by reduced cooling; ffatures are planar passivated chips; very short recovery time; extremely low switching losses;soft recovery behaviour | Ixys Corporation (0A5K5) | |
| DSEI60-10A DSEI6010A | 5961-01-464-9100 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type AND Quantity: 3 insulated wire lead Overall Length: 0.776 millimeters minimum and 0.799 millimeters maximum | Ixys Corporation (0A5K5) | |
| DSEK 30-60A DSEK3060A | 5961-01-615-1740 | Semiconductor Device, Diode | Ixys Corporation (0A5K5) | ||
| DSEP8-12A DSEP812A | 5961-01-605-1786 | Semiconductor Device, Diode | Inclosure Material: Plastic Features Provided: High frequency Special Features: Advantages are avalanche voltage rated for reliable operation; soft reverse recovery for low emi/rfi; low irm reduces: -power dissipation within the diode, -turn-on loss in the commutating switch; planar passivated chips;very short recovery time;extremely low switching losses;soft recovery behaviour | Ixys Corporation (0A5K5) | |
| DSS20-0015B DSS200015B | 5961-01-608-8366 | Semiconductor Device, Diode | Ixys Corporation (0A5K5) |