Semiconductor Devices and Associated Hardware: 917AS7007, 91805583, 918383
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| 917AS7007 | 5961-01-124-9232 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.120 inches minimum and 0.200 inches maximum | Naval Air Systems Command (30003) | |
| 917AS700-9 917AS7009 | 5961-01-126-4867 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 2 uninsulated wire lead Overall Length: 0.300 inches maximum | Naval Air Systems Command (30003) | |
| 917AS8789 | 5961-01-128-9129 | Transistor | Semiconductor Material: Silicon Terminal Type and Quantity: 4 uninsulated wire lead Overall Length: 0.170 inches minimum and 0.210 inches maximum | Naval Air Systems Command (30003) | |
| 91803710 | 5961-01-575-9521 | Semiconductor Device, Diode | Semiconductor Material: Germanium Special Features: Tunnel diode | Thales (F6481) | |
| 91805254 | 5961-01-503-1808 | Transistor | Semiconductor Material: Silicon Terminal Type and Quantity: 3 uninsulated wire lead Mounting Method: Terminal | Thales (F6481) | |
| 91805258 | 5961-01-503-1807 | Transistor | Semiconductor Material: Silicon Terminal Type and Quantity: 3 uninsulated wire lead Mounting Method: Terminal | Thales (F6481) | |
| 91805583 | 5961-01-579-0230 | Rectifier, Semiconductor Device | Mounting Method: Slot and unthreaded hole Absolute Maximum Voltage Rating in Volts per Characteristic: 0.56 forward voltage, average and 40.00 working peak reverse voltage Absolute Maximum Current Rating per Characteristic: 120.00 amperes forward current, average | Thales (F6481) | |
| 91812409 | 5961-01-576-6117 | Semiconductor Device, Diode | Special Features: Features, surface mount minipak package, low height, 0.7 mm max, small footprint, 1.75 MM2; better thermal conductivity for higher power dissipation, single; single and dual versions; matched diodes for consistent performance; low turn-on voltage (as low as 0.34 V at ma); low fit (failure in time) rate; six-sigma quality level III Part Name Assigned By Controlling Agency: Minipak surface mount rf schottky barrier diodes | Thales (F6481) | |
| 91812546 | 5961-01-576-1631 | Semiconductor Device, Diode | Current Rating per Characteristic: 3.00 amperes maximum forward current, average | Thales (F6481) | |
| 91814511 | 5961-01-530-4430 | Transistor | Semiconductor Material: Silicon Terminal Type and Quantity: 4 printed circuit Overall Length: 0.238 inches minimum and 0.248 inches maximum | Thales (F6481) | |
| 91819801 | 5961-01-576-5382 | Semiconductor Device, Diode | Special Features: Ultr low reverse recovery time; ultra low switching losses; soft, non snap-off recovery charateristics; glass passivated for hermetic sealing; reverse avalanche capability; miniature package size III End Item Identification: Semiconductor device, diode III Part Name Assigned By Controlling Agency: Surface mount hermetically sealed superfast rectifier diode | Thales (F6481) | |
| 91826278 | 5961-01-575-7633 | Transistor | Overall Length: 0.575 inches minimum and 0.625 inches maximum Current Rating per Characteristic: 1.50 amperes maximum dark current Power Rating per Characteristic: 54.0 watts maximum off-state power dissipation | Thales (F6481) | |
| 91826328 | 5961-01-575-7790 | Transistor | Overall Length: 0.610 inches minimum and 0.640 inches maximum Mounting Method: Terminal Inclosure Material: Metal | Thales (F6481) | |
| 91827078 | 5961-01-575-6348 | Semiconductor Device, Diode | Semiconductor Material: Silicon Terminal Type and Quantity: 3 pin Overall Length: 0.800 inches minimum and 0.830 inches maximum | Thales (F6481) | |
| 91827966 | 5961-01-576-7866 | Transistor | Special Features: Halogen-free according to iec 61249-2-21 definition; trecnhfet power mosfet; high-side switching; low threshold: -2V (typically); fast switching speed: 20 ns (typ); low input capacitance: 20PF (typ) III End Item Identification: Transistor III Part Name Assigned By Controlling Agency: P-channel 60V (d-s) mosfet | Thales (F6481) | |
| 91830692 | 5961-01-576-5835 | Transistor | Special Features: Continuous drain current :4.2 a; drain-source breakdown voltage: 30V; gate-source breakdown voltage: 20 V III End Item Identification: N-channel mosfet III Part Name Assigned By Controlling Agency: Transistor | Thales (F6481) | |
| 91835253 | 5961-01-575-9834 | Semiconductor Device, Diode | Semiconductor Material: Silicon Special Features: Single configuration; leadfree; diodes packaged on 7 foot reel, 3000 count; ideal for mixing, detecting, switching, sampling, clamping, and wave shaping III Part Name Assigned By Controlling Agency: Surface mount rf schottky barrier diodes | Thales (F6481) | |
| 91835255 | 5961-01-575-9449 | Semiconductor Device, Diode | Semiconductor Material: Silicon Voltage Rating in Volts per Characteristic: 250.0 minimum forward voltage, average and 350.0 maximum forward voltage, average Special Features: Leadfree; diodes packaged on 7 foot reel, 3000 count; grounded center leads provide up to 10 db higher isolation; ideal for rf/id and rf tag applications | Thales (F6481) | |
| 918354 | 5961-01-439-3295 | Semiconductor Device, Diode | End Item Identification: Oscilloscope E/I fscm 03950 | Fluke Corporation (89536) | |
| 918383 | 5961-01-422-2877 | Transistor | Fluke Corporation (89536) |